METHOD AND DEVICE FOR MEASURING VOLTAGE DROP ACROSS SEMICONDUCTOR IN MISIM STRUCTURE Russian patent published in 1998 - IPC

FIELD: instrumentation engineering and electronic engineering. SUBSTANCE: method involves measurement of voltage drop across insulation by integrating current flowing through MISIM structure with respect to insulation capacitance; then integral obtained is subtracted from total voltage applied to MISIM structure. Device implementing this method has supply voltage output from pulse voltage source for MISIM structure, MISIM structure, voltage divider, integrating and amplifying unit, instrument capacitor, differentiating amplifier, display unit for voltage across semiconductor and insulation, and their time dependences. EFFECT: enlarged functional capabilities. 2 cl, 3 dwg