FIELD: measurement and test of electrophysical parameters, evaluation of quality of technological process during manufacture of solid integrated circuits and device based on MIS structures. SUBSTANCE: technical result ensured by invention consists in obtainment of possibility of direct recording of dependence of bending ψs (Va) of zones of semiconductor on voltage modulating MIS structure with different rate α of its change. For achievement of this aim sawtooth voltage is used in the capacity of modulating voltage and dependence of ψs on value of modulating voltage is found by difference of signals of half-waves of modulating voltage acting on MIS structure enriching and depleting structure of majority carriers across loading capacitance. EFFECT: possibility of direct recording of dependence of bending zones of semiconductor on voltage modulating MIS structure. 3 dwg
