PROCEDURE DETERMINING TENSION OF FLAT ZONES OF SEMICONDUCTOR IN METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURES Russian patent published in 2003 - IPC

FIELD: measurement and test of electric and physical parameters of semiconductors, evaluation of technological process producing solid microcircuits and devices based on MDS structures. SUBSTANCE: in compliance with invention bias voltage U_b and stripping voltage pulses U₁ with amplitude equal to 4ε_nqN/C20

where ε_n is dielectric constant of semiconductor; N is level of semiconductor doping; q is charge of electron; C₀ is capacitance of dielectric of MDS structure, are fed to MDS structure. Tension of flat zones is found by bias voltage at which signal across loading capacitance diminishes by factor of two as compared with signal across it with supply of stripping voltage pulse to MDS structure that is under state of enrichment. Technical result ensured by invention consists in winning of possibility to establish U_b = U_FB with high precision ( up to 1.0% ) with factor of two fall of signal across loading capacitance by way of simple and direct registration of U_FB without any complex computations. Procedure can be realized with use of any standard radio measurement equipment. EFFECT: high precision of procedure.