METHOD FOR CHEMICAL VAPOR-PHASE DEPOSITION OF THIN FILMS ONTO GLASS SUBSTRATE Russian patent published in 1998 - IPC

Abstract RU 2102347 C1

FIELD: high-technology deposition methods. SUBSTANCE: gaseous mixture comprising silicoorganic compound, tin-organic compound, oxygen source and process boosting agent is deposited by chemical vapor-phase method onto glass substrate at temperature below 200 C and under atmospheric pressure. Deposition boosting agent is selected from group consisting of organic phosphates, organic borates, water and mixtures thereof. Coating film (layer) is deposited at rate exceeding 350 angstrom/s. Film can be combined with other films to ultimately obtain product having tailor-made properties, such as predetermined radiative power, refraction index, wear resistance to abrasion, and external appearance. EFFECT: higher efficiency. 31 cl, 4 tbl

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RU 2 102 347 C1

Authors

Dehvid A.Russo[Us]

Rajan R.Dirks[Us]

Glenn P.Florsak[Us]

Dates

1998-01-20Published

1992-12-21Filed