FIELD: measurement technology. SUBSTANCE: device has monochromatic radiation source, specimen holder, rotating flat mirror with axis of rotation positioned on its reflecting surface, as well as first lens installed so that point optically conjugated with specimen point at which measurement is performed is located on axis of rotation of flat mirror, at place exposed to source radiation. Device has also second lens mounted for optical coupling of specimen point at which measurement is performed with receiving area of receiver at different angular positions of mirror. EFFECT: higher measurement results. 2 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DEVICE FOR NON-DESTRUCTIVE MEASUREMENT OF DIELECTRIC AND SEMICONDUCTOR FILM THICKNESS | 2009 |
|
RU2411448C1 |
| DEVICE FOR NON-DESTRUCTIVE MEASURING OF THICKNESS OF DIELECTRIC AND SEMICONDUCTOR FILMS IN PREDETERMINED POINT | 1991 |
|
RU2025656C1 |
| INTERFERENCE METHOD OF MEASUREMENT OF THE SEMICONDUCTOR LAYER THICKNESS | 0 |
|
SU1747877A1 |
| PROCESS OF MEASUREMENT AND TESTING OF PARAMETERS OF LAYERS OF MICROCIRCUITS | 1991 |
|
RU2006985C1 |
| METHOD OF CONTACT-FREE DETERMINING OF THICKNESS OF EPITAXIAL SEMICONDUCTOR LAYERS | 0 |
|
SU1737261A1 |
| DEVICE FOR VARYING THE INCIDENCE ANGLE OF LIGHT BEAM ONTO SPECIMEN | 0 |
|
SU1772609A1 |
| DEVICE FOR DETERMINING OPTICAL ABSORPTION LOSSES IN THIN FILMS | 2008 |
|
RU2377542C1 |
| DEVICE FOR REMOTE NON-DESTRUCTIVE FLAW DETECTION | 1992 |
|
RU2073851C1 |
| METHOD FOR CONTACT-FREE DETERMINATION OF LIFE SPAN FOR NON-EQUILIBRIUM CARRIERS IN SEMI-CONDUCTORS | 2010 |
|
RU2450387C1 |
| METHOD FOR MEASURING THICKNESS OF THIN FILM AND MAPPING TOPOGRAPHY OF ITS SURFACE USING WHITE LIGHT INTERFEROMETER | 2016 |
|
RU2641639C2 |
