PROCESS OF MEASUREMENT AND TESTING OF PARAMETERS OF LAYERS OF MICROCIRCUITS Russian patent published in 1994 - IPC

FIELD: instrumentation. SUBSTANCE: for measurement of parameters there is used phenomenon of generation of second harmonic with reflection of laser radiation from tested surface which exhibits high sensitivity to crystallographic structure of layers close to surface and to physical and chemical processes going on in it. Process provides for measurement of dependence of relation of intensities of scattered radiation on basic frequency and on frequency of second harmonic from angle of turn of backing and with its movement with subsequent comparison of obtained data with standard sample. This comparison demonstrates degree of homogeneity of layer. EFFECT: improved efficiency of measurement and testing. 13 cl, 4 dwg