DEVICE FOR NON-DESTRUCTIVE MEASURING OF THICKNESS OF DIELECTRIC AND SEMICONDUCTOR FILMS IN PREDETERMINED POINT Russian patent published in 1994 - IPC

Abstract RU 2025656 C1

FIELD: measurement technology. SUBSTANCE: device has a monochromatic radiation source which radiation is directed onto a specimen at continuously varying light incidence angle, planar rotating mirror for continuously varying the incidence angle, two elliptic mirrors through a focus of which a rotation axis of the planar mirror passes, radiation detector located in a focus of second elliptic mirror. Reflected radiation intensity variations are studied by plotting an interference curve the number of maxima of which is used for determining a film thickness is irradiated point of the specimen. EFFECT: widened application range due to substantially reduced measuring time. 1 dwg

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RU 2 025 656 C1

Authors

Ivanov A.S.

Letenko D.G.

Torchinskij I.A.

Fedortsov A.B.

Churkin Ju.V.

Dates

1994-12-30Published

1991-07-10Filed