DEVICE FOR NON-DESTRUCTIVE MEASUREMENT OF DIELECTRIC AND SEMICONDUCTOR FILM THICKNESS Russian patent published in 2011 - IPC G01B11/06 

Abstract RU 2411448 C1

FIELD: physics.

SUBSTANCE: proposed device comprises monochromatic radiation source, specimen holder, rotary flat mirror and radiation receiver secured to recorder. Flat mirror rotational axis is arranged on mirror reflecting surface. Additionally, proposed device comprises first spherical and second spherical mirrors. The former is arranged so that the point optically aligned with specimen point whereat measurement is performed, is located on flat mirror rotational axis whereat source radiation falls. Second spherical mirror is arranged to allow optical alignment of specimen point whereat measurements are performed with receiver receiving side at various angular positions of flat mirror.

EFFECT: IR or UV radiation may be used as sounding radiation.

1 dwg

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RU 2 411 448 C1

Authors

Fedortsov Aleksandr Borisovich

Ivanov Aleksej Sergeevich

Churkin Jurij Valentinovich

Manukhov Vasilij Vladimirovich

Dates

2011-02-10Published

2009-07-27Filed