METHOD FOR MANUFACTURING SILICON-ON-SAPPHIRE MIS TRANSISTOR Russian patent published in 2007 - IPC H01L21/336 

FIELD: microelectronics; integrated circuits built around silicon-on-sapphire structures.

SUBSTANCE: proposed method for manufacturing silicon-on-sapphire MIS transistor includes arrangement of silicon layer island on sapphire substrate, formation of transistor channel therein by doping silicon island with material corresponding to channel type, followed by production of gate insulator and gate, as well as source and drain regions; prior to doping silicon island with material corresponding to channel type part of silicon island is masked; mask is removed from part of silicon island of inherent polarity of conductivity upon doping its unmasked portion and producing gate insulator; in addition, part of gate is produced above part of silicon island of inherent polarity of conductivity; source region is produced in part of silicon island of inherent polarity of conductivity and drain region is produced in part of silicon island doped with material corresponding to channel type.

EFFECT: improved output characteristics of short-channel transistor at relatively great size of gate.

1 cl, 7 dwg