METHOD FOR PRODUCING SUBMICRON AND NANOMETER COMPONENTS OF SOLID-STATE DEVICES Russian patent published in 1997 - IPC

FIELD: semiconductor engineering; producing reusable masks with self-forming and self-aligning lithographic pattern. SUBSTANCE: method involves following procedures: solid body surface is covered with double-layer mask having desired properties and pattern forming mechanical stress concentrators in it, mask is treated to generate desired mechanical stresses in it causing formation of narrow holes in mask at points where concentrators are located due to formation of cracks; then precision shift of their edges occurs due to sliding of mask top layer over bottom auxiliary layer. Auxiliary layer is then removed from under main layer at surface areas near holes. EFFECT: facilitated procedure. 4 cl, 7 dwg