MANUFACTURING TECHNIQUE FOR FIELD-EFFECT SEMICONDUCTOR STRUCTURES WITH CONTROL P-N JUNCTION AND VERTICAL CHANNELS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: multilayer dielectric mask is formed on silicon substrate with epitaxial n-type layer, gate areas are etched with use of plasma-chemical method until slit is formed, then inner surface of slit is oxidized and oxide formed in the process is removed from slit bottom. Upon doping gate areas with p-type admixture oxide formed again is removed from slit bottom; epitaxial deposition of p-type silicon is carried out until slit is filled up. EFFECT: increased output of serviceable structures due to elimination of diffusion of p-type doping admixture from gate area and additional etching of gate area. 8 dwg