FIELD: microelectronics. SUBSTANCE: method includes preliminary heating of substrate to temperature of 400-600 C, deposition on substrate of intermediate layer of metal included into composition of conducting material, deposition in form of lines by the method of physical sublimation of substrate material. The device for embodiment of the method has flash sublimate, substrate heater, regulating diaphragm located above sublimator, bin with batchers installed symmetrically above sublimator. Batchers have troughs for supply of powder of intermediate and conducting layers and provided with vibrators. EFFECT: higher efficiency. 3 cl, 1 dwg
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