FIELD: nanoelectronics and computer engineering; single-electron logic and storage circuits operating at room temperature. SUBSTANCE: first, second, and n-th gate electrodes are formed on atomically smooth surface of solid-state substrate followed by formation of inert dielectric molecular matrix electrically insulated from solid-state substrate surface and having embedded active molecules and clusters that function as centers of location of tunnelling electrons thereby forming single-electron tunnel junctions. EFFECT: enlarged functional capabilities. 3 cl, 2 dwg
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