TUNNEL DEVICE Russian patent published in 2009 - IPC H01L29/43 B82B1/00 

FIELD: physics.

SUBSTANCE: invention relates to nanoelectronic functional devices and can be used for device and circuit application of nanotechnology, for example, in designing single-electron logic circuits, single-electron and spin memory circuits. The tunnel device contains an input, output and N control electrodes, tunnel barriers and inter-barrier space in form of an ordered structure from nano-objects, which provides for single-electron correlated electron tunnelling in the device. The device has a planar structure. Each control electrode lies in the region of the ordered structure from nano-objects. The ordered structure consists of nano-objects with magnetic properties. The input and output electrodes have ferromagnetic properties for spin-polarisation of electrons.

EFFECT: wider functional capabilities of the device through control of tunnel current using an external magnetic field or a combination of an electric and a magnetic field and detection of magnetic field, including spatial non-uniformity of the magnetic field.

5 cl, 6 dwg