METHOD FOR MANUFACTURING A CONDUCTIVE NANOCELL WITH QUANTUM DOTS Russian patent published in 2022 - IPC H01L29/78 H01L21/336 B82Y10/00 H01L21/3065 H01L21/308 B81C3/00 B82B3/00 B32B41/00 C23F1/02 C01B32/182 

FIELD: nanotechnology.

SUBSTANCE: invention relates to nanoelectronics, namely, to methods for manufacturing elements and structures of appliances with quantum effects. Proposed is a method for manufacturing a conductive nanocell with quantum dots, including the application of a nanofilm of vanadium activated by aluminium in a volume fraction of 1 to 5% in the form of a conductor strip of a nanoscale width to a non-conductive substrate; over said nanofilm, a protective mask with a nanoslit across the conductor strip; plasma chemical etching of the mask through the nanoslit with carbon tetrafluoride in a flow medium of purified argon while cooling the reaction zone in the temperature range not lower than the dew point in the reactor chamber; the etching rate is therein adjusted and selected experimentally so as to ensure a high aspect number of the nanocell; targeted deposition of quantum dots is conducted by electrophoresis from a matrix made in the form of a monomolecular film deposited by the Langmuir–Blodgett method; the precision of the location of quantum dots in the nanogap between the nanoelectrodes of the nanocell is herein provided by the alternating supply of direct or alternating voltage between one of the nanoelectrodes and the electrode of the electrophoretic apparatus.

EFFECT: memory and voltage modulation nanocells, single-electron transistor in circuits of opto- and nanoelectronics.

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