NONLINEAR OPTICAL TRANSISTOR Russian patent published in 1998 - IPC

FIELD: information processing. SUBSTANCE: transistor incorporates two laser diodes, phase modulator located between them and electrodes above these elements. Laser diodes emit by their surfaces and are limited by mirrors. Fabry-Perot microresonators with vertical optical axis are formed in area of laser diodes with the use of multilayer Bragg reflectors. Coats bringing reflection factor of mirrors to one are deposited on butt faces. Grating of distributed Bragg reflector is formed above waveguide of phase modulator. Sectional electrode is deposited on lower base. EFFECT: increased functional characteristics of transistor. 7 dwg