METHOD OF DETERMINATION OF CURRENT WHICH FORMS HIGH-VOLTAGE BREAKDOWN CHANNEL IN CRYSTAL DIELECTRICS BY MEANS OF DEPENDENCE OF BREAKDOWN CHANNEL FORMATION SPEED FROM VOLTAGE Russian patent published in 1998 - IPC

Abstract RU 2108592 C1

FIELD: electrical breakdown physics. SUBSTANCE: dielectric specimen is positioned in coaxial breakdown cell between two electrodes formed by breaking the central conductor of coaxial breakdown cell. One of electrodes is sharpened. It has function of cathode or anode depending on polarity of high-voltage pulse supplied. High-voltage pulse Ugen1 is supplied from generator to surface of dielectric specimen through sharpened electrode with resistor series-connected to central conductor which forms this electrode. Delay time between pulse arrival at specimen surface and appearance of current pulse on second electrode after breakdown is measured. Broken-down dielectric specimen is replaced by other specimen of the same dimensions. Resistor is disconnected, and high-voltage pulse is applied to specimen through sharpened electrode. High-voltage pulse amplitude Ugen2 is of such value at which delay time of current pulse appearance on second electrode is the same as in case of breakdown of first specimen of dielectric by voltage Ugen1, with resistor connected to circuit. Voltage difference is determined and divided by resistor numerical value. Thus current value sought for is obtained. EFFECT: more reliable determination of current which forms high-voltage breakdown channel. 3 dwg

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RU 2 108 592 C1

Authors

Emlin R.V.

Dates

1998-04-10Published

1996-01-18Filed