SHF-PLASMA DEPOSITION OF DIELECTRIC FILMS ON METAL SURFACES Russian patent published in 1998 - IPC

FIELD: deposition of dielectric films. SUBSTANCE: invention refers to SHF-plasma deposition of dielectric films on metal surfaces with small curvature radius. It may be used for insulation of conductors of various transmitters operating in corrosive and chemically active media, for passivation of various metal surfaces, for manufacture of fibre-optical workstocks having different refractive indices over their sections, for manufacture of extended articles with small curvature radius. SHF-plasma deposition of SiN₄ and SiO₂ dielectric films on metal surfaces involves their synthesis in crossed fluxes of flame-forming and silicon-carrying gas close or on treated surface heated by IR radiation to temperature of 80-200 C. In this case flux of IR radiation is directed in opposition to plasma flux. For manufacture of uniform coats on extended articles with small curvature radius these articles are placed perpendicular to plasma flux and are rotated about their longitudinal axes. EFFECT: increased efficiency of proposed process of deposition of dielectric films. 1 cl