METHOD OF MICROWAVE-PLASMA-ENHANCED DEPOSITION OF DIELECTRIC FILMS ON METALLIC SURFACES WITH SMALL RADIUS OF CURVATURE Russian patent published in 2003 - IPC

FIELD: plasma technology. SUBSTANCE: invention, in particular, relates to deposition of dielectric films with crystalline phase inclusions and can find use when manufacturing different tools, in particular for medical application. Method involves synthesis in crossed streams of plasma-forming and silicon-containing gases on a surface being treated preheated to 80-200 C by IR radiation or near the surface. IR radiation is oriented against plasma stream and the surface is arranged in parallel to radiation and rotated round its longitudinal axis. Heated surface is preliminarily insulated from installation body, affected by crystalline material stream, and positive relative plasma constant electric potential is introduced. EFFECT: enabled formation of thickness-uniform dielectric coatings with crystalline inclusions on small-curvature radius metallic tools. 3 ex