PROCESS OF PLASMA-CHEMICAL PICKLING OF SILICON-CARRYING MATERIALS Russian patent published in 1999 - IPC

Abstract RU 2141701 C1

FIELD: manufacture of solid microelectronic devices. SUBSTANCE: process of plasma-chemical pickling of silicon-carrying materials includes pickling through polymer resistive mask with plasma-forming mixture containing sulfur hexafluoride (SF₆), carbon tetrachloride (CCl₄), acetone (C₃H₆O₂) and argon Ar with following percentage of components, volume per cent: CCl₄ 3.0.-7.0; Ar 10.0-13.0; C₃H₆O₂ 12.0-16.0, SF₆ being the balance. EFFECT: provision for assured pickling of functional layers of different thickness in solid microelectronic devices through polymer resistive masks thanks to increased resistance of masks in process of pickling.

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RU 2 141 701 C1

Authors

Red'Kin S.V.

Aristov V.V.

Dates

1999-11-20—Published

1997-05-22—Filed