FIELD: computer engineering, microelectronics, optoelectronics. SUBSTANCE: tunnel-clear layer of dielectric is placed between semiconductor substrate and metal electrode in superlattice. Substrate is so doped that region of spatial charge on boundary with dielectric in semiconductor is tunnel- clear. Thickness of dielectric layer is 1-5 nm. JnGa is used in the capacity of metal of electrode if substrate is made from silicon of p-type of conductance. EFFECT: facilitated manufacture, improved operational stability. 2 cl, 7 dwg
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