FIELD: microelectronics, formation of conductive coats with unique mechanical and thermal properties, high resistance to chemical, electrochemical action and environmental effects, formation of mechanically strong, wear-resistant and chemically stable, wear-resistance and resistant to chemicals functional and protective coats. SUBSTANCE: process includes formation of plasma in vacuum chamber with evaporation of hydrocarbon carrying silicon and of beam of particles of alloying material by supply of high-frequency voltage to substrate holder. Chamber is pumped out to pressure not higher than 1.10-5 Torr before start of process, voltages providing for stationary process of deposition and heating of ceramic leak to 500-800 C for supply of hydrocarbon carrying silicon is fed to thermocathode, anode and substrate holder, argon is fed into chamber till stable burning of plasma is achieved, this condition is kept for 5-10 min, then substrates are isolated from flow of plasma and argon pressure in chamber is raised to Torr. After this feed of hydrocarbon carrying silicon is started with simultaneous switching on of source of particles of alloying material. On expiration of 3-4 min isolation of substrates is discontinued. EFFECT: manufacture of alloyed diamond-like films with composition homogeneous by volume.
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Authors
Dates
1998-08-27—Published
1997-10-10—Filed