FIELD: microelectronics; applicable in formation of carbon-containing coatings with new unique properties. SUBSTANCE: method includes production of plasma in vacuum chamber with evaporation of liquid hydrocarbon and beam of particles of alloying material with application of high-frequency voltage to base holder. In this case, prior to beginning of process, chamber is evacuated to pressure of not in excess of 2•10-3 application to hot cathode, anode and substrate-holder of voltage ensuring stationary process of precipitation and heating of ceramic leak up to 300-900 C for supply of liquid hydrocarbon; supplying to chamber of argon up to setting-up of steady-state plasma; holding of process for 3-25 min; isolation of substrate from plasma flow and building up argon pressure in chamber up to value above 3•10-4тoop torr, and then, supply of liquid hydrocarbon and source of particles of alloying material are started, and upon elapse of, at least, one minute, insulation of bases is discontinued. EFFECT: higher quality of coating.
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Authors
Dates
1999-11-10—Published
1998-09-08—Filed