PROCESS OF MANUFACTURE OF HETEROJUNCTION BASED ON LAMELLA SEMICONDUCTOR Russian patent published in 1998 - IPC

FIELD: semiconductor electronics. SUBSTANCE: process of manufacture of heterojunction based on lamella semiconductor includes irradiation of lamella semiconductor in point of supposed arrangement of electric contact by single pulse of technological laser with energy density E=1.2E = 1,2•E_пор, where E is density of energy of laser pulse; E_пор - is density of energy of laser needed for melting of surface of lamella semiconductor. Metal with proper work function is deposited on supposed point of contact by precipitation from aqueous solution CuSO₄ by substitution of copper by needle made from indium. Peeling along planes of junction of monocrystalline plates or films of lamella semiconductor for their deposition on substrate of manufactured heterojunction is carried out. Heterojunction is manufactured with the aid of mechanical clamping of monocrystalline plate or film of lamella semiconductor against substrate. Manufactured heterojunction is cured in the course of 15-20 days at room temperature to ensure complete diffusion of contact metal into lamella semiconductor. Irradiation by technological laser is conducted for semiconductor materials transparent for laser irradiation, for instance of GaSc type, perpendicular to layers till recess or hole observed visually is formed. Irradiation by technological laser is conducted for semiconductor materials, for example of InSe type, in parallel to layers till melted section observed visually is formed. EFFECT: enhanced efficiency of process. 3 cl, 4 dwg