METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE Russian patent published in 2017 - IPC H01L29/861 H01L21/329 

FIELD: electricity.

SUBSTANCE: diode comprises the semiconductor layer that has the first side and the primary side and the opposite to the primary side secondary side, the semiconductor layer has the thickness between the primary side and the secondary side. Upon that, the semiconductor layer thickness is comparable to the mean-free path of the emitted into the semiconductor layer charge carriers. The diode comprises the first metal layer, deposited on the semiconductor layer primary side, the second metal layer, deposited on the semiconductor layer secondary side, the first heterojunction between the semiconductor layer and the first metal layer or between the semiconductor layer and the second metal layer. The semiconductor layer, the first metal layer and the second metal layer are designed with a possibility of the realisation the charge carrier ballistic conduction from the first metal layer through the semiconductor layer into the second metal layer.

EFFECT: obtaining the diode with the thermionic emission current high-density, the high nonlinearity and the rectification.

25 cl, 7 dwg, 1 tbl