METHOD OF STABILIZATION OF SENSITIVITY OF PULSE GENERATOR AND GEAR FOR ITS REALIZATION Russian patent published in 1998 - IPC

Abstract RU 2119213 C1

FIELD: semiconductor technology. SUBSTANCE: method can be recommended for devices incorporating several semiconductor components sensitive to different kinds of photon radiation, from optical to gamma radiation. Energy absorbed in region of p-n junction is converted into electric energy with use of at least one p-n junction. Low-frequency component of signal generated by generator is then excluded by shunting of generator with reactive element. Oscillatory process in integrating circuit is excepted by insertion of nonlinear element into it. Output signal of device is reduced by compensating signal of second integrating generator. Device for realization of method of stabilization of sensitivity of integrating semiconductor pulse generator is manufactured in the form of bridge circuit composed of two adjacent loops electrically interconnected by means of common jumper that is diagonal of bridge. First loop formed by first and second arms and diagonal has semiconductor photovoltaic generator placed in first arm shunted with inductor and diode connected in series with it. First capacitor is put into second arm. Diode in first arm has polarity that ensures flow of generated current into capacitor in forward direction. Second loop of bridge circuit is formed by common diagonal, third and fourth arms of bridge. Third arm includes second capacitor and fourth arm incorporates second semiconductor photovoltaic generator. First generator of first arm of bridge and second generator of fourth arm are connected with leads having same polarity to common point, that is they are connected in opposition one to another charging in this way first and second capacitors correspondingly in adjacent second and third arms of bridge to charging voltage of opposite polarities. Common connection points between first and second arms of bridge and between third and fourth arms of bridge are leads-out of device. EFFECT: simplified stabilization of sensitivity, reduced cost of stabilization of sensitivity of semiconductor photovoltaic generator without usage of radiation technologies, stabilization of characteristics of generator in time. 2 cl, 2 dwg

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RU 2 119 213 C1

Authors

Peretrukhin S.F.

Platunov V.N.

Rudnev A.V.

Serebrjannikov M.E.

Dates

1998-09-20Published

1996-08-08Filed