PROCESS OF GENERATION OF HOLOGRAM ON SILICON Russian patent published in 1998 - IPC

FIELD: holographic recording and reproduction of wave fronts of light, information recording and storage on semiconductor materials especially if reproduction of wave fronts of light carrying recorded information in visible and infrared regions of spectrum is necessary. SUBSTANCE: surface amorphous layer on which interference picture from object and reference beams of coherent radiation of nanosecond range of wave length in absorption band of amorphous semiconductor is recorded is formed in silicon sample by method of ion implantation. After recording of interference picture sample is additionally subjected to radiation by pulse of noncoherent light. EFFECT: increased diffraction efficiency of holograms on silicon with reproduction in visible and IR regions of spectrum. 4 dwg