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2 593 912

(13)

(51)

IPC

G02B5/18(2006-01-01)

H01L21/265(2006-01-01)

(21) (22)

Application

2015110730/28, 2015-03-25

(24)

Start date

2015-03-25

(22)

Actual filing date

2015-03-25

(45)

Published

2016-08-10

(72)

Inventor

Stepanov Andrej LvovichNuzhdin Vladimir IvanovichValeev Valerij FerdinandovichOsin Yurij Nikolaevich

(73)

Holder

Federalnoe Gosudarstvennoe Byudzhetnoe Uchrezhdenie Nauki Kazanskij Fiziko-Tekhnicheskij Institut Im. E.K. Zavojskogo Kazanskogo Nauchnogo Tsentra Rossijskoj Akademii Nauk Kaznts Ran)

METHOD OF DIFFRACTION PERIODIC MICROSTRUCTURE MAKING BASED ON POROUS SILICON Russian patent published in 2016 - IPC G02B5/18 H01L21/265

Abstract RU 2593912 C1

FIELD: chemistry.

SUBSTANCE: method of diffraction periodic microstructure making based on porous silicon includes forming specified diffraction periodic microstructure with help of ions implantation of noble or transition metals through surface mask with energy of 5-100 keV. At that, exposure dose provides concentration of metal atoms in irradiated substrate of silicon of 2.5·10²⁰-6.5·10²³ atoms/cm³. Ion beam current density is 2·10¹²-1·10¹⁴ ion/(cm²·s) at substrate temperature during exposure of 15-450 °C.

EFFECT: technical result consists in possibility of making diffraction periodic microstructure based on porous silicon with nanoparticles of different metals in vacuum.

1 cl, 20 dwg

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RU 2 593 912 C1

Authors

Stepanov Andrej Lvovich

Nuzhdin Vladimir Ivanovich

Valeev Valerij Ferdinandovich

Osin Yurij Nikolaevich

Dates

2016-08-10—Published

2015-03-25—Filed