FIELD: physics.
SUBSTANCE: method of making a diffraction grating includes forming, on the surface of a starting substrate, elements of a given structure of the diffraction grating via ion implantation through a surface mask, wherein implantation is carried out with metal ions with energy of 1100 keV, a radiation dose which provides concentration of metal atoms embedded in the irradiated substrate of 3·1020-6·1022 atoms/cm3, current density of the ion beam of 2·1012-1·1014 ions/cm2s in an optically transparent dielectric or semiconductor substrate.
EFFECT: making diffraction gratings on the surface of optically transparent dielectric or semiconductor materials, characterised by high contrast in coefficients of reflection between separate elements of the grating, which improves diffraction efficiency thereof and enables to use for both reflected and transmitted light.
8 dwg, 3 ex
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Authors
Dates
2015-03-20—Published
2013-12-27—Filed