FIELD: microelectronics, in particular, generation of pin holes for manufacturing vacuum integral circuits. SUBSTANCE: method involves oxidation and etching by means of application of gas discharge in crossed electric and magnetic fields with magnetic inductance level in range of 0.005-0.07 T in pure oxygen under pressure in range of 1-0.05 Pa. Simultaneously method involves monitoring of process in order to prevent surface burning. EFFECT: improved emission characteristics, simplified design of manufacturing process. 4 cl, 3 dwg
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