METHOD OF PRODUCTION OF SILICON IN THREE-PHASE ORE-SMELTING FURNACE Russian patent published in 1998 - IPC

Abstract RU 2122970 C1

FIELD: electrothermic production of technical silicon. SUBSTANCE: charge with mass relation C:SiO2==(0.54-0.56)i-1/2b

rel.units is loaded into central part of bath of three-phase ore-smelting furnace, charge with relation C:SiO2=(0.27- 0.28)i-1/2+0.2 rel.units is loaded to electrodes with i being density of current in bath, A/sq. cm, , where Jt is strength of current in electrodes, A; S is distance between axes of electrodes in bath of furnace; de is diameter of electrodes, cm. EFFECT: increased productivity, enhanced extraction of silicon and decreased specific consumption of electric energy. 1 tbl

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RU 2 122 970 C1

Authors

Brusakov Ju.I.

Varjushenkov A.M.

Saltykov A.M.

Zhabo V.V.

Eremin V.P.

Shchapov E.N.

Zolotajko A.V.

Dates

1998-12-10Published

1996-10-04Filed