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2 125 019

(13)

C1

(51)

IPC

(21) (22)

Application

95101439/25, 1995-01-30

(22)

Actual filing date

1995-01-30

(45)

Published

1999-01-20

(72)

Inventor

Dzhonatan Nel

(73)

Holder

Atomik Ehnerdzhi Korporehjshn Of Souf Afrika Limited

METHOD OF TREATMENT OF DISSOCIATED ZIRCON Russian patent published in 1999 - IPC

Abstract RU 2125019 C1

FIELD: chemical technology. SUBSTANCE: method involves an interaction of dissociated zircon with gaseous hydrogen fluoride at increased temperature. Reaction temperature is regulated for synthesis of at least one zirconium-base compound and at least one silicon-base compound. Silicon-base compound - silicon tetrafluoride is defluorinated further to obtain silicon dioxide and hydrogen fluoride. Zirconium-base compound - zirconium dioxide is processed to obtain technical zirconium dioxide or zirconium dioxide of high purity. EFFECT: improved method of treatment, high purity of the end product. 13 cl, 3 tbl, 5 ex, 11 dwg

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RU 2 125 019 C1

Authors

Dzhonatan Nel

Dates

1999-01-20—Published

1995-01-30—Filed

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