FIELD: semiconductor equipment. SUBSTANCE: device has circuit for generation of reference voltage, comparator for comparison voltage of inner source to reference voltage, starting circuit for application of external source voltage to inner voltage source under control of comparator, and circuit for generation of low-level reference voltage for output of control signal, which initiates starting circuit, when voltage level at external source is less than reference voltage. This results in prevention of signal output by comparator under control signal of circuit which generates low- level reference voltage. In this way external source voltage is applied to memory registers of memory unit. EFFECT: increased speed. 6 cl, 3 dwg
