SEMICONDUCTOR DEVICE Russian patent published in 2006 - IPC H01L29/93 

FIELD: engineering of semiconductor devices, possible use in microelectronics.

SUBSTANCE: device may be made in form of variable capacitor, variable capacitance diode, transistor, transmission line, controlled by voltage of capacitor of alternating capacity. Semiconductor device contains insulating layer, on one surface portion of which a conductive portion is formed, while on another portion of surface first layer is formed, made of semiconductor of electron or electron hole conductivity types, with ohmic contact, on the surface of first layer second layer is made, made of semiconductor or metal, forming a semiconductor transition with first layer, with other ohmic contact, while a portion of insulating layer, contacting with first layer, is made of high-ohm semiconductor. Selection of alloying profile and thickness of first layer is limited by condition of full depletion of first layer or its portion by main charge carriers until disruption of semiconductor transition during feeding of external shift to it, determined by provided formula.

EFFECT: possible production of device, allowing during alternation of value of controlling voltage, fed to ohmic contacts to semiconductor transition, to adjust in broad range the value of capacity of capacitor, formed between ohmic contact to first layer and conductive portion, made on insulating layer, and also to adjust in broad range the value of resistance of insulating (semiconductor) layer.

4 cl, 17 dwg