SEMICONDUCTOR DEVICE Russian patent published in 2006 - IPC H01L29/93 

FIELD: microelectronics; devices made in the form of voltage-controlled variable capacitors, varicaps, or transistors.

SUBSTANCE: proposed semiconductor device has semiconductor with two heavily doped regions whose polarity of conductivity is reverse to that of semiconductor and relevant ohmic contacts formed on its surface; insulator layer formed on part of semiconductor surface having common boundary with mentioned heavily doped regions; conducting layer formed on external surface of mentioned insulator layer. Proposed semiconductor device incorporates provision for controlling value of capacitor formed between ohmic contact and insulating-layer conducting region in response to variations in control voltage applied between conducting layer and ohmic contact.

EFFECT: enlarged functional capabilities of device.

8 cl, 6 dwg