TRANSISTOR Russian patent published in 1999 - IPC

FIELD: electronic engineering. SUBSTANCE: transistor has emitter, base, and collector areas with respective ohmic contacts. Gate electrode made either of semiconductor material of type of conductivity reverse to that of emitter and having ohmic contact or of metal forming Schottky barrier together with emitter is provided above emitter area ( y <0) formed in effective area (0≤x≤x₀, F₁(x)≤z≤F₂(x), 0≤y≤D(x)). Emitter is made in the form of film having either nonuniform thickness D(x) along x-axis, or nonuniform doping profile Ni(x, y), or nonuniform thickness D(x) and nonuniform doping profile Ni(x, y), or else gate electrode may be made in the form of semiconductor layer nonuniformly doped along x-axis. its polarity of conductivity being reverse to that of emitter above emitter area, including that uniformly doped along x-axis and having uniform thickness. Emitter layer film thickness D(x) and doping profile are to be chosen so as to ensure complete depletion of part of emitter area by majority charge carrier up to breakdown of p-n junction or Schottky barrier formed between gate electrode and emitter. Transfer characteristic of transistor is determined by chosen functional dependence of emitter area size F(x) in direction of x-axis F(x) = F₂(x)-F₁(x)), where x and z are coordinates in emitter film surface plane, including rectangular ones. Transistor may be manufactured with any predetermined type of transfer characteristic including linear one. EFFECT: improved design and input impedance of transistor. 4 cl, 6 dwg