SEMICONDUCTOR DEVICE Russian patent published in 1998 - IPC

FIELD: microelectronics; manufacture of parametric amplifiers, generators, and inertialess variable capacitors. SUBSTANCE: semiconductor device has semiconductor in the form of film with semiconductor junction formed with heterogeneous impurity profile along surface coordinate axis X. Formed on semiconductor surface along surface coordinate axis Y are conducting strips arranged in spaced relation to each other and to ohmic contact; conducting strips are connected to conducting section formed on insulating layer or high-resistance semiconductor; conducting pad is formed on other surface of insulation or high-resistance semiconductor. Insulating or high-resistance layer is formed over free surface of device. EFFECT: provision for adjusting value of device capacitor placed between conducting strips in case of control voltage fluctuations. 2 cl, 4 dwg