SEMICONDUCTOR DEVICE Russian patent published in 2006 - IPC H01L29/93 

FIELD: microelectronics.

SUBSTANCE: proposed semiconductor device has first n or p semiconductor layer with relevant ohmic contact, second semiconductor or metal layer formed on part of first semiconductor layer surface that organizes semiconductor junction together with first semiconductor layer and provided with other ohmic contact; insulating layer is formed on part of device external surface, and conducting layer formed on part of mentioned insulating-layer surface. Proposed device incorporates provision for controlling value of capacitor formed between semiconductor layer ohmic contact and conducting region on insulating layer in response to variations in control voltage applied across semiconductor-junction ohmic contacts.

EFFECT: enlarged functional capabilities.

8 cl, 5 dwg