EMITTER-CONTROLLED TRANSISTOR SWITCH Russian patent published in 2004 - IPC

Abstract RU 2236745 C1

FIELD: electrical engineering; converters and secondary power supplies.

SUBSTANCE: proposed transistor switch has series-connected high-voltage bipolar transistors 1 and low-voltage field-effect transistor 2 whose gate is connected to lead intended for connecting control pulse source. Connected between base of high-voltage bipolar transistor 1 and low-voltage field-effect transistor 2 is parallel circuit set up of first voltage regulator diode 3, capacitor 7, and second voltage regulator diode 5 connected in series with starting lead of secondary-winding 6.2 of current transformer whose primary winding 6.1 is inserted in collector circuit of high-voltage bipolar transistor 1 and its starting lead is connected to power supply. Resistor is inserted between base of high-voltage bipolar transistor 1 and control voltage source.

EFFECT: reduced power of dc control voltage source, enhanced capacity, simplified design.

1 cl, 1 dwg

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RU 2 236 745 C1

Authors

Gumanovskij B.Ja.

Dates

2004-09-20Published

2003-02-26Filed