FIELD: method of production of epitaxial layers of silicon carbide free of defects in form of micropipes. SUBSTANCE: method includes growth of epitaxial layer of silicon carbide on substance from silicon carbide by liquid phase epitaxy from melt of silicon carbide in silicon and in element which increases solubility of silicon carbide in melt. Atom per cent of this element prevails over atom per cent of silicon in melt. Defects in form of micropipes spread by substrate into epitaxial layer are closed with the help of continuation of growth of epitaxial layer under corresponding conditions until thickness of epitaxial layer reaches thickness at which defects in form of micropipes present in substrate will not be reproduced further in epitaxial layer. EFFECT: considerable reduction of number of defects in form of micropipes in epitaxial layer. 15 cl, 6 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SiC CRYSTAL WITH DIAMETRE OF 100 mm AND METHOD OF ITS GROWING ON OFF-AXIS SEED | 2007 |
|
RU2418891C9 |
| BOULE OF THE III-V GROUPS ELEMENT NITRIDE USED FOR PRODUCTION OF SUBSTRATES AND THE METHOD OF ITS MANUFACTURE AND APPLICATION | 2001 |
|
RU2272090C2 |
| METHOD OF GROWING SILICON CARBIDE STRUCTURES | 0 |
|
SU1726571A1 |
| PROCESS FOR EPITAXIAL GROWTH OF SILICON CARBIDE OF 4H POLYTYPE | 1980 |
|
SU913762A1 |
| METHOD FOR GROWTH OF EPITAXIAL STRUCTURE OF MONOCRYSTALLINE SILICON CARBIDE WITH LOW DENSITY OF EPITAXIAL DEFECTS | 2018 |
|
RU2691772C1 |
| ARTICLE WITH SILICON CARBIDE COATING AND METHOD FOR MANUFACTURING OF ARTICLE WITH SILICON CARBIDE COATING | 2018 |
|
RU2684128C1 |
| METHOD OF PRODUCTION OF SILICON CARBIDE LAYERS | 1986 |
|
RU1398484C |
| SUBSTRATE FOR GROWING EPITAXIAL FILM AND LAYERS OF GALLIUM NITRIDE | 2001 |
|
RU2209861C2 |
| METHOD FOR PRODUCING SUBSTRATE BASED ON SILICON CARBIDE AND SILICON CARBIDE SUBSTRATE | 2018 |
|
RU2756815C2 |
| METHOD OF OBTAINING TUBULAR SILICON CARBIDE CRYSTAL | 2000 |
|
RU2182607C2 |
