FIELD: electricity.
SUBSTANCE: semiconductor crystal of silicone carbide includes monocrystal seed part 21 and monocrystal grown part 22 on the above seed part 21; at that, seed 21 and grown 22 parts essentially form regular cylindrical monocrystal of silicone carbide 20; at that, boundary between grown and seed part shall be determined by seed part 23 which essentially is parallel to bases of the above regular cylindrical monocrystal 20 and has deviation from axis approximately through 0.5°-12° relative to base plane 26 of monocrystal 20, and the above monocrystal grown part reproduces polytype of the above monocrystal seed part and has the diametre at least of 100 mm.
EFFECT: obtaining high-quality monocrystals of silicone carbide of big diametre, from which separate plates with off-axis surfaces in the form of circle can be obtained.
28 cl, 7 dwg
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