FIELD: electrical equipment; semiconductor equipment.
SUBSTANCE: method of growth of the epitaxial structure of monocrystalline silicon carbide with low density of epitaxial defects consists in the fact that for the growth of monocrystalline SiC a monocrystalline SiC substrate is used, the surface of which is misoriented with respect to Miller-Bravais (1120) crystallographic plane by more than 0°, but not more than 8°. Surface of substrate on one side is etched in hydrogen, silane or argon at temperature of not less than 1,450 °C and not over 1,800 °C and hydrogen pressure of not less than 30 mbar and not more than 500 mbar for not more than 90 minutes, after which a monocrystalline SiC buffer layer with a thickness of at least 0.5 mcm and not more than 30 mcm is grown on the etched substrate surface, on the surface of which a single-crystal epitaxial SiC layer is grown.
EFFECT: invention can be used in the growth of epitaxial structures of monocrystalline silicon carbide (SiC) with low density of epitaxial defects.
1 cl, 2 dwg, 1 tbl
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