METHOD OF OBTAINING TUBULAR SILICON CARBIDE CRYSTAL Russian patent published in 2002 - IPC

FIELD: electronic instrumentation engineering; method of dimensional profiling of silicon carbide crystals; microsystem technique; optoelectronics, etc. SUBSTANCE: method of obtaining tubular silicon carbide crystal includes sublimation of silicon carbide along profiling rod to growth cavity shut off by seed monocrystal; at initial stage, sublimation is effected into cavity formed by wall of growth cavity and surface of taper end-piece of profiling rod which is movable relative to monocrystal seed, under conditions of electric field inclusive. Method involves: possibility: (1) tubular monocrystal at low density of dislocations (N_D< 10⁴ sm^-2); (2) tubular monocrystals of any form of cross section of inner cavity; (3) tubular monocrystals with eccentric cavity; (4) tubular seed; (5) tubular monocrystals with inner helical thread; (6) tubular heteropolytypic structures, polytype 4H in particular on seed crystal 6H-Sic. EFFECT: higher efficiency. 3 cl, 2 dwg