GAS SENSOR Russian patent published in 2011 - IPC G01N27/12 

Abstract RU 2437087 C2

FIELD: chemistry.

SUBSTANCE: sensor has a semiconductor base and a substrate. The semiconductor base is made from a polycrystalline film of indium antimonide doped with cadmium sulphide. The electrode platform of a piezoelectric crystal resonator serves as the substrate.

EFFECT: invention enables to determine content of nitrogen dioxide with sensitivity which is several times higher than that of existing sensors with significantly simple technology of making the sensor.

3 dwg

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RU 2 437 087 C2

Authors

Kirovskaja Iraida Alekseevna

Filatova Tat'Jana Nikolaevna

Dates

2011-12-20Published

2008-04-24Filed