FIELD: gas analysis, in particular, detecting devices used for registration and measurement of content of micro-admixtures of nitrogen and other gases.
SUBSTANCE: in the sensor, containing semiconductor base and substrate, semiconductor base is made of polycrystalline film of cadmium telluride, alloyed with indium antimonide, and as substrate, electrode platform of piezo-quartz resonator is utilized.
EFFECT: increased sensitivity and manufacturability of sensor manufacture, expanded functional capabilities of sensor.
3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR SENSOR OF CARBON OXIDE | 2016 |
|
RU2637791C1 |
| SEMICONDUCTOR GAS SENSOR OF AMMONIA TRACE IMPURITIES | 2015 |
|
RU2607733C1 |
| GAS SENSOR | 2008 |
|
RU2437087C2 |
| SEMICONDUCTOR GAS SENSOR FOR OXYGEN TRACE SUBSTANCES | 2015 |
|
RU2610349C1 |
| NITROGEN DIOXIDE SENSOR | 2016 |
|
RU2636411C1 |
| NANO-SEMICONDUCTOR GAS SENSOR | 2010 |
|
RU2422811C1 |
| NANO-SEMICONDUCTOR GAS SENSOR | 2010 |
|
RU2458338C2 |
| SEMICONDUCTOR GAS ANALYSER | 2009 |
|
RU2398219C1 |
| SEMICONDUCTOR GAS SENSOR OF TRACE OXYGEN MICRO IMPURITIES | 2019 |
|
RU2710523C1 |
| SEMICONDUCTOR GAS SENSOR OF TRACE IMPURITIES OF OXYGEN | 2015 |
|
RU2603337C1 |
