FIELD: optical radiation. SUBSTANCE: the method is accomplished with employment at least of one nonlinear light pipe, and comprises introduction of optical radiation in one cubic - and/or quadratic-nonlinear light pipe, change-over of unidirectional or opposite coupled waves at a change at least of one of the parameters at the input, and separation and/or emission of radiations at the output. The optical radiation wavelength is selected from conditions 0,5λr ≤ λ ≤ 1,5λr, where λr - wavelength of single-photon and/or double-photon exciton resonance in the semiconductor structure of the nonlinear light pipe. The temperature of the semiconductor structure of the light pipe is set proceeding from the endurance of the preset value of threshold intensity, and/or critical intensity, and/or differential gain, and the temperature of the nonlinear light pipe is stabilized. The nonlinear light pipe is made on the basis of a layer semiconductor structure, type MQW, with alternating layers, having at least two heterojunctions. The Peltier element is electrically coupled with a temperature controller and/or regulator, and is in a thermal contact with each nonlinear light pipe. EFFECT: enhanced pumping power at the device input, enhanced differential gain and change-over depth. 44 cl, 5 dwg
