FIELD: nonlinear integrated and fibre optics, optical transistors. SUBSTANCE: the method is accomplished with employment of a nonlinear light pipe made on the basic of a layer semiconductor structure, type MQW, and consists in the fact that an optical radiation, whose power exceeds the threshold one, linearly polarized, with orientation of the optical radiation electric field vector at an angle of 10o < α < 80o to the "fast" or "slow" axis of the nonlinear light pipe, and divided into waves of orthogonal polarization at the system output. Electric current is passed through the nonlinear light pipe, and the temperature is set and stabilized of the nonlinear light pipe, whose at last one end is made anti-reflecting. The device for change-over, amplification, control and modulation of optical radiation has a nonlinear light pipe and radiation input output elements made in the form of input and output light pipes or cylindrical lenses and graddans. EFFECT: reduced pumping power at the system input, enhanced differential gain, improved compactness and enhanced reliability of device operation. 69 cl, 17 dwg
