PROCEDURE FOR SELECTIVE DETERMINATION OF CONCENTRATION OF DELETERIOUS IMPURITIES IN GASES AND GEAR FOR ITS REALIZATION Russian patent published in 2000 - IPC

FIELD: gas analysis, solution of ecological problems. SUBSTANCE: procedure includes use of semiconductor sensor carrying selective sensitive layer. Analyzer has chamber with sensor carrying sensitive layer and additional chamber with another sensor. Each chamber is manufactured in the form of separable easily-to-remove unit. One chamber houses sensor determining concentration of impurities of gas-oxidants and having sensitive layer based on In₂O₃ modified by additions of at least one of oxides α-Fe₂O₃, γ-Fe₂O₃, Ga₂O₃, Sm₂O₃. Sensor in the other chamber is intended for measurement of concentration of impurities of gases-ruductants and has sensitive layer based on In₂O₃ modified by additions of G₂O₃ and Au, concentration of additions being 0.5-3.0 molecular per cent. Operational temperature of sensor is 200-350 C. EFFECT: enlarged range of impurities measured in gases, improved sensitivity and selectivity of analyzer. 2 cl, 2 dwg