SEMICONDUCTOR RESISTIVE SENSORS MANUFACTURING METHODS FOR THE OZONE IN THE AIR CONTENT MEASUREMENTS Russian patent published in 2018 - IPC G01N27/12 

FIELD: analytical chemistry.

SUBSTANCE: invention relates to the field of creating highly sensitive sensors and devices based on them for measuring toxic gases and can be used in analytical chemistry, environmental monitoring, in atmospheric monitoring, for measuring ozone concentration in technological processes and in scientific research. Method of manufacturing semiconductor resistive sensors for measuring the concentrations of gas impurities consists in the fact, that metal oxide semiconductor films are applied to heated dielectric substrates and form a sensitive layer by means of experimentally established multistage annealing regimes with continuous measurement of the resistance of the metal oxide film, while for measurements of ozone concentrations in air in a wide range of concentrations from 10 to 400 mcg/m³ use metal films based on In₂O₃ with Fe₂O₃, and the mode of forming the sensitive layer involves heating the film in an inert gas at a rate of 5 °C/min to a temperature of 570 °C/min, cooling to room temperature, and then heating in air at a rate of 7 to 10 °C/min up to 400–600 °C and annealing in the presence of 250 mcg/m³ ozone for 8 hours. Second variant of the method for manufacturing semiconductor resistive sensors for measuring the concentrations of gas impurities is also proposed.

EFFECT: technical result: providing the required sensitivity and accuracy of measurements of resistive semiconductor sensors in a wide range of ozone concentrations.

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