SEMICONDUCTOR GAS SENSOR Russian patent published in 2014 - IPC G01N27/14 

FIELD: instrument making.

SUBSTANCE: semiconductor gas sensor comprises a body 1 of a reaction chamber 2 made from corrosion-resistant steel. The body 1 closed at the end with a net 3 from stainless steel with wire of diameter 0.03-0.04 mm and pitch of 0.06-0.08 mm. In the body 1 in the centre of the reaction chamber 2 on contact conductors 4 there is a ball-shaped semiconductor sensitive element 5 with the help of wires of a heater 6 and a metering conductor 7. Inside the semiconductor gas sensitive element 5 there is a heater 6 in the form of a cylindrical spring, inside of which along its axis and the diameter of the ball-shaped semiconductor element 5 there is a straight metering conductor 7. The heater 6 and the metering conductor 7 of the gas sensitive element 5 are made of a platinum wire with diameter of 0.01-0.02 mm, the heater 6 has 2-7 turns of the wire, the ball-shaped semiconductor gas sensitive element 2 has the diameter of 0.4-0.8 mm and is made of the mixture of tin oxide SnO₂: 5-95 wt % and indium oxide In₂O₃: 5-95 wt %.

EFFECT: higher sensitivity of a semiconductor gas sensor to low concentrations of gas, development of a simple, reliable, comparatively cheap and efficient sensor, capable of long-term operation in non-serviced mode.

7 dwg, 3 tbl